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Crystallographic dependence of loss in domain engineered relaxor-PT single crystals

机译:晶畴工程弛豫-PT单晶中损耗的晶体学依赖性

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摘要

Domain engineered ⟨001⟩ oriented relaxor-PbTiO3 ferroelectric crystals exhibit high electromechanical properties and low mechanical Q values, analogous to “soft” piezoelectric ceramics. However, their characteristic low dielectric loss (≤0.5%) and strain-electric field hysteresis are reflective of “hard” piezoelectric materials. In this work, the electromechanical behavior of relaxor-PT crystals was investigated as a function of crystallographic orientations. It was found that the electrical and mechanical losses in crystals depends on the specific engineered domain configuration, with high Q observed for the ⟨110⟩ orientation. The high Q, together with high electromechanical coupling (∼0.9) for ⟨110⟩ oriented relaxor-PT crystals, make them promising candidates for resonant based high power transducer applications.
机译:与“软”压电陶瓷类似,畴工程设计的“ 001”取向弛豫器-PbTiO3铁电晶体具有较高的机电性能和较低的机械Q值。但是,它们具有低介电损耗(≤0.5%)和应变电场滞回的特点,反映了“硬”压电材料的特性。在这项工作中,弛豫-PT晶体的机电行为作为晶体学取向的函数进行了研究。结果发现,晶体的电和机械损耗取决于特定的工程畴结构,对于⟨110⟩取向观察到高Q值。 Q110 with取向弛豫-PT晶体的高Q值和高机电耦合(〜0.9),使其成为基于谐振的高功率换能器应用的有希望的候选者。

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